ALD Fundamentals: Precursors and Mechanisms (1:30-3:30 pm)/High Aspect Ratios & High Surface Areas (4:00-5:30 pm) (AF-SuA)
Sunday, Jul 16 2017 1:30PM, Room Plaza E
Moderated by: Roy Gordon, Harvard University; Charles H. Winter, Wayne State University; Mato Knez, CIC nanoGUNE; Ola Nilsen, University of Oslo
Abstracts (Use Expand/Collapse icon in first column to see/hide details)
Logon for Personal Schedule SchedulePaper #Invited TalkTitle
1:30 PMAF-SuA-1Atomic Layer Deposition of Silicon Dielectrics: Precursors, Processes and Plasmas
2:00 PMAF-SuA-3Atomic Layer Deposition of Carbon Doped Silicon Oxide by Precursor Design and Process Tuning
2:15 PMAF-SuA-4Evaluation of Silicon Precursors for Low Temperature Silicon Nitride Deposition
2:30 PMAF-SuA-5Atomic Layer Deposition of SiO2 Using Tris(dimethylamino)Aminosilane Precursor and Ozone
2:45 PMAF-SuA-6In situ Infrared Absorption Study of Plasma-Enhanced ALD of Silicon Nitride using Di-sec-butylaminosilane and Bis(t-butylamino)silane on Silicon and Silicon Nitride Surfaces
3:00 PMAF-SuA-7First-Principles Understanding of Reaction Mechanisms in Plasma Enhanced Atomic Layer Deposition of Silicon Nitride
3:15 PMAF-SuA-8Atomic Layer Deposition of AlN from AlCl3 using NH3 and Ar/NH3 Plasma as Co-reactant
4:00 PMAF-SuA-11Nanoscale Gettering of Excess O in CuO Nanowires via ALD Al2O3
4:15 PMAF-SuA-12Temperature Dependent Growth of Alumina on Tungsten Nano-Powder
4:30 PMAF-SuA-13Critical Aspects in Fluid Bed ALD
4:45 PMAF-SuA-14Super-Conformal Growth by ALD
5:00 PMAF-SuA-15Thin Film Conformality Profile Analysis with Microscopic All-Silicon Lateral High Aspect Ratio Structures
5:15 PMAF-SuA-16ALD onto Particles: Batch and Continuous Processes for Industry
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