ALD/ALE 2026 Tuesday Afternoon

Sessions | Time Periods | Topics | Schedule Overview

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Session Tuesday, June 30, 2026
1:30 PM 2:30 PM 3:30 PM 4:30 PM 5:30 PM
AA1-TuA
Copper's Cosy Blanket: A Comparison of Non-Selective and Area-Selective ZnO deposition on Catalyst Stability
Effect of Buffer Layers on Cobalt-Based Thin-Film Catalysts for Fischer–Tropsch Synthesis
Preparing Well-defined CO2-Conversion Catalysts using Atomic Layer Deposition
Palladium Nanostructures by ALD for Electrocatalysis: From Single Atoms to Nanoparticles
Controlling the Wettability and Durability of PEM Electrolysers with Plasma-Enhanced ALD of Niobium Nitride
ALD Imparts Efficiency Improvements in Proton Exchange Membrane Water Electrolyzers
Atomic Layer Deposition of Tantalum Oxide for enhanced stability of CNTs during Photoelectrochemical Water Splitting
Atomic Layer Deposited AZO on Lithium Niobate: A Scalable Platform for RF Energy Harvesting and Frequency Mixing
BREAK & EXHIBITS
AA2-TuA
Fabricating Artificial Electrode Electrolyte Interfaces for Lithium Batteries
Beyond Conventional ALD: Investigating Standalone Chemical Vapor Transformation Precursors for Battery Cathode Functionalization
Tackling Issues of Transition Metal Oxide Cathodes Using Sulfide Coatings
Atomic Layer Deposition Tuned Surface Chemistry for Advanced Lithium and Manganese Rich Cathodes
Comparing Al-phosphate ALD on LiMn2O4 and SiO2
Unravelling the Mechanism of Al2O3 Atomic Layer Deposition on Li6PS5Cl for All-Solid-State Batteries
AF1-TuA
Low Energy Ion Scattering Surface Analysis of ALD Coated Ti-Based Porous Transport Layers
In vacuo LEIS studies on cleaning and functionalizing substrate surfaces for ALD
ALD Outstanding Presentation Award Finalist: Operando Studies of Nitride ALD Using Ambient Pressure XPS
In-situ XPS Study of Ozone Oxidation of Aminosilane Adsorption Layers on Alumina
In situ and Operando investigation of MLD of Hafnicone Using Ambient Pressure-XPS
Pyroelectric Calorimetry of MgO and ZrO2: Untangling Thermodynamics, Kinetics, and Precursor Transport
BREAK & EXHIBITS
AF2-TuA
ALD Outstanding Presentation Award Finalist: Where Does the Reaction Happen? Concurrently Monitoring Ultrafast Surface and Gas-Phase Dynamics in Solid–Gas Interfacial Reactions
Dual-Box Model for In-Situ Spectroscopic Ellipsometry Data Analysis in Plasma Enhanced ALD Growth Processes
Imaging Ellipsometry with LHAR Test Structure for Characterizing ALD Conformality
Surface Chemistry Investigation for ALD of SiOCH Using in-Situ Reflection Absorption Infrared Spectroscopy (RAIRS)
ALE1-TuA
Etch Characteristics of Iridium with Atomic Layer Etching Technique
Selectivity, Surface Roughness and Residue of Plasma-Based Atomic Layer Etching of Metals and Dielectric Materials for Semiconductor Devices
Directional Atomic Layer Etching of MgO-Doped Lithium Niobate Using Br-Based Plasma
Examining AlGaN Atomic Layer Etch per Cycle Uniformity and Repeatability by Cross-Referencing In-Situ Etch Depth Monitoring with Electrical Characterisation
Atomic Layer Etching Techniques for Sidewall Surface Damage Removal in GaN-Based LEDs
BREAK & EXHIBITS
ALE2-TuA
Self-Limiting Oxidation State Control of MoOx Thin Films Using Integrated ALD and ALE
Selective Etching of Molybdenum and Tungsten Oxides Based on Their Oxidation States Using SOCl2 and SO2Cl2
High-Density Silicon Lines Patterning with Atomic Layer Etch Pitch Splitting (APS™) Technology
Direct Atomic Layer Processing (DALP®): Extending ALD and ALE to Spatially Localized Multi-Material Integration
Atomic Layer Etching of Titanium Nitride with O3 and NbCl5
EM1-TuA
Real-time Optimization of Gallium Oxide and Aluminum Gallium Oxide Thin Film Growth via Plasma-Enhanced Atomic Layer Deposition Using In-situ Spectroscopic Ellipsometry
Conductive Si-Doped Ga2O3 via Thermal ALD Followed by Thermal Annealing
Low-Temperature Self-Limiting Growth of Crystalline III-Nitride Films: How Far Can We Go?
Piezoelectric and ferroelectric Al1-xScxN by plasma-enhanced ALD
Low Temperature PEALD of Epitaxial AlN Without Atomic Layer Annealing
Enabling Blister-Free, Crystalline AlN Thin Films on 200 mm Si Wafers by PE-ALD Using a Microwave Electron Cyclotron Resonance Plasma Source
BREAK & EXHIBITS
EM2-TuA
ALD Synthesis of Transition Metal Phosphides
A Novel Chemistry toward the Atomic Layer Deposition of MoS2 thin films for Heterojunction Photocatalysis
The Role of Plasma Conditions on the Properties of MoS2 Films Grown by PEALD Using H2 plasma and Di-tert-butyl Disulfide
ALD-Induced Doping Effect in 2D MoS2 FETs: Roles of Oxidant Chemistry and MoS2 Quality
Processing MoS2 and WS2 using ALD and Patterning on 8-Inch Wafers
Exploiting Atomic Layer Deposition for Contacts to Semiconductors
Sessions | Time Periods | Topics | Schedule Overview