ALD/ALE 2026 Wednesday Morning

Sessions | Time Periods | Topics | Schedule Overview

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Session Wednesday, July 1, 2026
8:00 AM 9:00 AM 10:00 AM 11:00 AM
AA1-WeM
Atomic Layer Deposition in Conventional and Emerging DRAM Devices
Sacrificial Atomic Layer Deposition for Nanostructured Chalcogenide Materials
Enhancing Dielectric Properties of ALD Al-Doped HfO2 Films for Memory Applications: The Role of Homogeneous Aluminum Distribution
Germanium Doping for Electrical Modulation of Ferroelectric HZO Using Atomic Layer Deposition
Design of Interface Formation Process for Superior Ferroelectricity and Enhanced Fatigue Resistance in HfxZr1−xO2-Based Ferroelectric Devices
Low-Temperature ALD HfO2 for Magneto-Ionic Applications
High-mobility Atomically Ordered IGZO Transistors Deposited by Thermal Atomic-Layer-Deposition
BREAK & EXHIBITS
AA2-WeM
Upper-Layer-Induced Crystallization of Metastable Rutile TiO2
Surface-Reaction-Energetics-Driven Stabilization of Rutile TiO2 at Low Temperatures in Atomic Layer Deposition
Magnetism of Ultrathin TiO2 Films Prepared by Atomic Layer Deposition
Low-Temperature Peald of Silicon Nitride Using Diiodosilane for High-Conformality Spacers of Three-Dimensional Memory Devices
A Nanolaminate Cushion Approach for Stabilizing Ultrathin Al₂O₃ and SiO₂ Dielectrics in Future Logic and Memory Technologies
AF1-WeM
Understanding Temporal Behavior of Adsorption and Desorption in ALD via Multiple Injections of Precursor
Improved Atomic Layer Deposition of Ultra-Thin HfO2 Dielectrics on Transition Metal Dichalcogenide Surfaces via Low Impact Plasma Pretreatments
Comparing HfO2 Thin Films Grown by Low-temperature Thermal and Plasma ALD for Neuromorphic Functionality
Germanium Oxide with Tunable Composition Using Low-Temperature PEALD
Low Temperature Thermal Atomic Layer Deposition of Bismuth Oxide Thin Films Using a Novel Precursor
Effect of Initial Surface Silanol Density and Aminosilane Structure on O2 Plasma-Assisted ALD of SiO2
Limits of Plasma Oxidation in Cr2O3 Ald: Over-Oxidation, Etching, and Defect Control
Composition-Tunable Molybdenum Carbonitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition (PEALD) for Diffusion Barriers in Cu and Ru Interconnects
BREAK & EXHIBITS
AF2-WeM
Low-Temperature Plasma-Enhanced Atomic Layer Deposition of Crystalline Gan Thin Films Using Monovalent Organogallium Precursor
Plasma-Enhanced Growth of Low-κ Amorphous Boron Nitride: From 25 °C to 400 °C
Comparing the Effect of H2 and N2 Plasma on Boron Nitride Surface During Plasma Enhanced Atomic Layer Deposition Using Density Functional Theory
Precise and Narrow Ion-Energy Distributions in Plasma-Enhanced ALD of Nitrides Using Tailored-Waveform Biasing
Characterizing Inductively Coupled Plasmas in Ar/N2/H2 Mixtures for Plasma Enhanced Atomic Layer Deposition
AS1-WeM
ALD Outstanding Presentation Award Finalist: Triazolylidene Small Molecule Inhibitor for Area-Selective Atomic Layer Deposition of High k-Dielectric Materials
Maintaining Healthy Boundaries – Machine Learning Design of SMIs
Role of Precursor and Aklanethiol Chain Length on Area Selective Deposition of Aluminum and Hafnium-Containing Films
Surface Blocking Effect of NH3 in Selective Co-ALD with CCTBA Precursor
Fluorination Passivation for Area-Selective Deposition: Selective Passivation of SiO2 vs SiNx for Highly Selective TiO2 Deposition using Water-Free TiCl4/Ti(iPrO)4.
Chemical Selectivity in Atomic Layer Selectivity (ALD) via Gas-Phase Silylation using N-(trimethylsilyl)dimethylamine (TMSDMA)
Mechanistic Criteria for Area Selective Deposition of Multicomponent AlxSiyO Oxide Dielectrics 
BREAK & EXHIBITS
AS2-WeM
Perfect Selectivity vs Practical Sustainability in ASD
Photoassisted Chemical Vapor Deposition as a Strategy for Area Selective Deposition of Ru:Implications for Developing an ALD Process
Highly Selective Ru Growth on Metallic Substrates against Dielectric Surface via Inherent Area-selective Atomic Layer Deposition Using a Novel Ru Precursor
Mechanistic Insights into Area-Selective Etching of Ruthenium 
EM1-WeM
Platinum Growth on Li-Based Thin Films Using Thermal ALD
The Stability Study of ITO Film Deposited by Thermal Atomic Layer Deposition
Atomic Layer Deposition of TiN layer in Interposer Chip for Superconducting Quantum Processor Unit
Achieving Ultra-Low Resistivity in TiN Thin Films via Supercycle PEALD: The Critical Role of Ti:N Stoichiometry over Impurity Content
Characterization of Superconducting Niobium Nitride Thin Films Grown by Thermal Atomic Layer Deposition
BREAK & EXHIBITS
EM2-WeM
Let There Be Light: Photo-Assisted ALD of Pt Using Pt(acac)2 and O3
Microwave Enhanced Atomic Layer Deposition (MW-ALD) of Ta2O5
Electron-Enhanced Atomic Layer Deposition of Tunable TiCxNy Ternary Nitride Films Using Tetrakis(dimethylamido)titanium with Ammonia Reactive Background Gas
Pulsed Excimer Laser Processing to Promote Room-Temperature Crystallization of ALD HfO2 Films
Thermally Activated Atomic Layer Annealing (ALA): A Plasma Free Approach to Densification of Hafnia Thin Films
Sessions | Time Periods | Topics | Schedule Overview