ALD/ALE 2026 Wednesday Morning
Sessions | Time Periods | Topics | Schedule Overview
Hover over a paper or session to view details.
Click a Session in the first column to view session papers.
| Session | Wednesday, July 1, 2026 | |||||||||||||||
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| 8:00 AM | 9:00 AM | 10:00 AM | 11:00 AM | |||||||||||||
| AA1-WeM |
Atomic Layer Deposition in Conventional and Emerging DRAM Devices
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Sacrificial Atomic Layer Deposition for Nanostructured Chalcogenide Materials
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Enhancing Dielectric Properties of ALD Al-Doped HfO2 Films for Memory Applications: The Role of Homogeneous Aluminum Distribution
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Germanium Doping for Electrical Modulation of Ferroelectric HZO Using Atomic Layer Deposition
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Design of Interface Formation Process for Superior Ferroelectricity and Enhanced Fatigue Resistance in HfxZr1−xO2-Based Ferroelectric Devices
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Low-Temperature ALD HfO2 for Magneto-Ionic Applications
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High-mobility Atomically Ordered IGZO Transistors Deposited by Thermal Atomic-Layer-Deposition
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BREAK & EXHIBITS
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| AA2-WeM |
Upper-Layer-Induced Crystallization of Metastable Rutile TiO2
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Surface-Reaction-Energetics-Driven Stabilization of Rutile TiO2 at Low Temperatures in Atomic Layer Deposition
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Magnetism of Ultrathin TiO2 Films Prepared by Atomic Layer Deposition
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Low-Temperature Peald of Silicon Nitride Using Diiodosilane for High-Conformality Spacers of Three-Dimensional Memory Devices
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A Nanolaminate Cushion Approach for Stabilizing Ultrathin Al₂O₃ and SiO₂ Dielectrics in Future Logic and Memory Technologies
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| AF1-WeM |
Understanding Temporal Behavior of Adsorption and Desorption in ALD via Multiple Injections of Precursor
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Improved Atomic Layer Deposition of Ultra-Thin HfO2 Dielectrics on Transition Metal Dichalcogenide Surfaces via Low Impact Plasma Pretreatments
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Comparing HfO2 Thin Films Grown by Low-temperature Thermal and Plasma ALD for Neuromorphic Functionality
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Germanium Oxide with Tunable Composition Using Low-Temperature PEALD
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Low Temperature Thermal Atomic Layer Deposition of Bismuth Oxide Thin Films Using a Novel Precursor
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Effect of Initial Surface Silanol Density and Aminosilane Structure on O2 Plasma-Assisted ALD of SiO2
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Limits of Plasma Oxidation in Cr2O3 Ald: Over-Oxidation, Etching, and Defect Control
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Composition-Tunable Molybdenum Carbonitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition (PEALD) for Diffusion Barriers in Cu and Ru Interconnects
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BREAK & EXHIBITS
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| AF2-WeM |
Low-Temperature Plasma-Enhanced Atomic Layer Deposition of Crystalline Gan Thin Films Using Monovalent Organogallium Precursor
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Plasma-Enhanced Growth of Low-κ Amorphous Boron Nitride: From 25 °C to 400 °C
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Comparing the Effect of H2 and N2 Plasma on Boron Nitride Surface During Plasma Enhanced Atomic Layer Deposition Using Density Functional Theory
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Precise and Narrow Ion-Energy Distributions in Plasma-Enhanced ALD of Nitrides Using Tailored-Waveform Biasing
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Characterizing Inductively Coupled Plasmas in Ar/N2/H2 Mixtures for Plasma Enhanced Atomic Layer Deposition
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| AS1-WeM |
ALD Outstanding Presentation Award Finalist: Triazolylidene Small Molecule Inhibitor for Area-Selective Atomic Layer Deposition of High k-Dielectric Materials
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Maintaining Healthy Boundaries – Machine Learning Design of SMIs
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Role of Precursor and Aklanethiol Chain Length on Area Selective Deposition of Aluminum and Hafnium-Containing Films
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Surface Blocking Effect of NH3 in Selective Co-ALD with CCTBA Precursor
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Fluorination Passivation for Area-Selective Deposition: Selective Passivation of SiO2 vs SiNx for Highly Selective TiO2 Deposition using Water-Free TiCl4/Ti(iPrO)4.
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Chemical Selectivity in Atomic Layer Selectivity (ALD) via Gas-Phase Silylation using N-(trimethylsilyl)dimethylamine (TMSDMA)
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Mechanistic Criteria for Area Selective Deposition of Multicomponent AlxSiyO Oxide Dielectrics
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BREAK & EXHIBITS
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| AS2-WeM |
Perfect Selectivity vs Practical Sustainability in ASD
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Photoassisted Chemical Vapor Deposition as a Strategy for Area Selective Deposition of Ru:Implications for Developing an ALD Process
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Highly Selective Ru Growth on Metallic Substrates against Dielectric Surface via Inherent Area-selective Atomic Layer Deposition Using a Novel Ru Precursor
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Mechanistic Insights into Area-Selective Etching of Ruthenium
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| EM1-WeM |
Platinum Growth on Li-Based Thin Films Using Thermal ALD
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The Stability Study of ITO Film Deposited by Thermal Atomic Layer Deposition
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Atomic Layer Deposition of TiN layer in Interposer Chip for Superconducting Quantum Processor Unit
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Achieving Ultra-Low Resistivity in TiN Thin Films via Supercycle PEALD: The Critical Role of Ti:N Stoichiometry over Impurity Content
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Characterization of Superconducting Niobium Nitride Thin Films Grown by Thermal Atomic Layer Deposition
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BREAK & EXHIBITS
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| EM2-WeM |
Let There Be Light: Photo-Assisted ALD of Pt Using Pt(acac)2 and O3
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Microwave Enhanced Atomic Layer Deposition (MW-ALD) of Ta2O5
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Electron-Enhanced Atomic Layer Deposition of Tunable TiCxNy Ternary Nitride Films Using Tetrakis(dimethylamido)titanium with Ammonia Reactive Background Gas
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Pulsed Excimer Laser Processing to Promote Room-Temperature Crystallization of ALD HfO2 Films
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Thermally Activated Atomic Layer Annealing (ALA): A Plasma Free Approach to Densification of Hafnia Thin Films
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