AVS 71 Session 2D-TuA: 2D Materials: Theory and Applications

Tuesday, September 23, 2025 5:00 PM in Room 205 ABCD W
Tuesday Afternoon

Time Period TuA Sessions | Abstract Timeline | Topic 2D Sessions | Time Periods | Topics | AVS 71 Schedule

Start Invited? Item
5:00 PM 2D-TuA-12 Synergistically Integrated WS2-MoSe2 Nanowires Cosputtered Over Porous Silicon Towards ppb Level No2
Sonika Kodan, Ramesh Chandra (Indian Institute of Technology Roorkee (IITR)); Somdatta Singh (Indian Institiute of Technology Roorkee)

Two-dimensional (2D) transition metal dichalcogenides (TMDs) have sparked significant research interest in gas sensing technologies owing to their large specific surface area, excellent sensitivity, high power efficiency, and ability to function at room temperature (RT). The present investigation outlines a highly selective and fully recoverable RT nitrogen dioxide (NO2) gas sensor based on molybdenum diselenide (MoSe2) and tungsten disulfide (WS2) nanocomposite co-sputtered directly over electrochemically anodized porous silicon substrate (PSi) employing the DC magnetron sputtering technique. Here, the PSi substrate substantially boosts the sensor’s characteristics by providing a large surface area for the growth of nanostructured sensing film, facilitating numerous active sites for the target gas interaction. In addition, the PSi structure makes the sensor’s surface highly hydrophobic, making it an ideal candidate for sensing applications in harsh and humid atmospheres. Compared to their pristine counterparts (MoSe2/PSi and WS2/PSi), the hybrid WS2-MoSe2/PSi nanostructured sensor demonstrates a superior sensor response of ~34.14% with a fast response/recovery time (~17.67 s / ~41.05 s) towards 50 ppb NO2 gasat RT, highlighting the enhanced synergistic effects within the nanocomposite sensor. The proposed WS2-MoSe2/PSi gas sensor delivers exceptional selectivity and commendable stability for over 100 days with retention of ~90.9% towards 50 ppb NO2 gas, even at RT (27˚C). Moreover, the sensor retains ~92.44% of its original response towards 50 ppb NO2 under high relative humidity (~80% RH). Therefore, the remarkable sensing properties exhibited by the developed WS2-MoSe2/PSi sensor render enticing possibilities for developing next-generation room temperature NO2 gas sensors.

5:15 PM 2D-TuA-13 Theoretical Study of van der Waals expitacy of Biayer Silicene on III-Sb substrates
Kumar Vishal, Hong Huang, yan zhuang (wright state university)

Research development of integrated silicon photonics in the mid-infrared (MIR) range has gained considerable momentum over the past decades, driven by its vital applications in biochemical sensing, medicine, and even astronomy communications. However, progress has been hampered by the limitation by the energy bandgap and optical transparency in conventional material. Very recently, it has been reported that 2D bilayer silicon (BLSi) demonstrates unique optical properties across the MIR spectrum. By adjusting the strain, the optical absorptions can be tuned in a wide range of wavelength from 1.5 -11.5 mm. However, experimentally the maximum in-plane strain achieved is ∼7% in a lattice-matching expitaxial silicon. Remote- and Van der Waals expitaxy methods can break the lattice-mismatch constraint to obtain single crystal 2D materials, but with an insufficient in-plane strain preserved in the 2D films.

In this work, motivated by the recent achievement of dative expitaxy of single crystalline Cr5Te8 on WSe2 enduring a ∼16% lattice mismatch, we conducted a theoretical study based on density function theory (DFT). Our aim is to explore the feasibility of growing BLSi on two III-Sb substrates: GaSb and AlSb. These substrates were chosen due to their ability to provide sufficient in-plane strain (11.92% and 12.23% respectively) to assure energy bandgap opening in BLSi. The generalized gradient approximation (GGA) and the strongly constrained and appropriately normed (SCAN) meta - generalized gradient approximation (meta-GGA) have been employed in the computation to analyze the chemical bond formation and to optimize the energetically favorable atomic structures. Our findings suggest that Van der Waals epitaxy of BLSi on both of the III-Sb substrates is viable when the substrate’s surfaces are terminated with the metallic atoms. By forming the dative bonds between the BLsi and the III-Sb substrates, substantial in-plane strain in BLSi can be preserved, leading to a low buckled BLSi with an opened energy bandgaps.
5:30 PM 2D-TuA-14 Tuning Bandgap in Nanoporous Graphene through Molecular Design
Mamun Sarker, Alexander Sinitskii (University of Nebraska - Lincoln)

Molecular design is a powerful tool for growing graphene nanostructures with atomic precision, enabling control over their electronic and physical properties. Precisely tuning these properties is essential for advancing the next generation of graphene-based 2D electronic devices. In this presentation, I will discuss the on-surface synthesis of novel nanoporous graphene (NPG) materials, whose electronic bandgaps can be tuned from semiconducting to nearly metallic through rational molecular design. These NPGs were synthesized using custom-designed polyaromatic precursors deposited on Au(111) and thermally activated under ultra-high vacuum via surface-assisted chemical reactions. Scanning tunneling microscopy (STM) reveals the structural integrity and periodicity of nanoporous networks. Scanning tunneling spectroscopy (STS), in combination with density functional theory (DFT), shows that strategic modifications in the pore size, topology, and connectivity can reduce the bandgap to as low as 0.05 eV, approaching metallic behavior. This work not only demonstrates the feasibility of tailoring graphene’s electronic structure with sub-nanometer precision but also establishes a versatile platform for engineering low-bandgap 2D materials.

Time Period TuA Sessions | Abstract Timeline | Topic 2D Sessions | Time Periods | Topics | AVS 71 Schedule