IWGO 2026 Thursday Morning

Sessions | Time Periods | Topics | Schedule Overview

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Session Thursday, August 6, 2026
8:00 AM 9:00 AM 10:00 AM 11:00 AM
IWGO-ThM1
Breakfast
Impact of Defects and Impurities on the Properties of Al2O3
GeO2 and GeXSn1–XO2 Alloys: Emerging Ultra-Wide-Band-Gap Materials for Power Electronics
Rutile GeₓSn₁₋ₓO₂ Alloys for Ultra-Wide Bandgap Electronics: Phase Stability and Bandgap Engineering
Single Ga-Layer Reconstruction Mediates Ga₂O₃ Heteroepitaxy: A Multiscale Atomistic Study
Carrier Mobility in GexSn1-xO2 Alloys from First Principles
COFFEE BREAK
IWGO-ThM2
4D-STEM and Machine Leaning Investigation of Defects and Polymorphism in Ultra Wide Band Gap Oxides and Nitrides
Bandgap Renormalization in Si-doped β-Ga2O3 Films
Formation and Stabilization of Ga Vacancies in β-(Al,Ga)2O3: Effects of Al-alloying, Si-doping, and Proton Irradiation
Nitrogen-Doped (AlGa)2O3/n-Ga2O3 Junctions Grown by Plasma-Assisted Molecular Beam Epitaxy
Sessions | Time Periods | Topics | Schedule Overview