AVS 72 Session AP2+EL+PS+TF-TuA: Advancing X-Ray Photoelectron Spectroscopy to enable Atomic Scale Processing

Tuesday, November 10, 2026 4:45 PM in Room 316
Tuesday Afternoon

Time Period TuA Sessions | Abstract Timeline | Topic AP Sessions | Time Periods | Topics | AVS 72 Schedule

Start Invited? Item
4:45 PM Invited AP2+EL+PS+TF-TuA-11 Understanding the Chemical Reaction Mechanisms of Oxide, Nitride and Metal ALD: Insights from Operando X-Ray Photoelectron Spectroscopy
Joachim Schnadt (Lund University)

Over the past decades, atomic layer deposition (ALD) has emerged as a leading thin-film deposition technique, particularly within semiconductor technology. The reason is that ALD provides excellent thickness control down to the atomic scale, as a result of the use of sequences of self-limiting surface reactions. However, continued device miniaturization imposes more and more stringent demands on process control. Interfaces need to be engineered with extremely high precision, and lateral dimension control grows in importance. This implies that the exact surface chemistry underlying ALD – and this chemistry is both process and surface specific – needs to be understood in true detail. Experimental operando techniques provide an avenue towards the monitoring and characterization of the ALD surface chemistry in a time-resolved manner; these techniques can be applied during the deposition and at measurement rates that allow to resolve the time evolution of surface species and surface structure. Ambient pressure X-ray photoelectron spectroscopy (APXPS) is such an operando tool. In contrast to conventional X-ray photoelectron spectroscopy, it is carried out at pressures up to the millibar range, i.e. exactly the operational pressure regime of ALD. Time-resolved APXPS provides precise insight into the occurrence and time evolution of surface and subsurface species and their chemical state and provides information that can be used to formulate chemical reaction mechanisms in the different stages of deposition. In my presentation, I will discuss the capabilities of operando APXPS for research into ALD, using examples of research into the ALD of metal oxides and nitrides from transition metal amido or metal tetraisopropoxide complexes and water or ammonia. I will also highlight the first APXPS study into Pt metal ALD. Due attention will be given to instrumental aspects, foreseen future developments and a discussion of what can and what cannot be learned from APXPS.

5:15 PM Invited AP2+EL+PS+TF-TuA-13 In vacuo XPS for Studying ALD Processes
Matthias Minjauw, Tippi Verhelle, Jin Li, Jolien Dendooven, Christophe Detavernier (Ghent University, Belgium)

X-ray photoelectron spectroscopy (XPS) is a well-established technique for probing near-surface composition and chemistry. When employed as an in vacuo technique—i.e., without intermittent air exposure—it becomes a powerful tool for investigating surface chemistry during atomic layer deposition (ALD) processes. Three case studies will be presented: (1) the well-known TMA-based chemistry for ALD of alumina, (2) metal ALD with a focus on Pt growth (as reported by Li et al., J. Phys. Chem. C 2024, doi:10.1021/acs.jpcc.3c07568), and (3) ALD on lithium foil substrates (as reported by Verhelle et al., J. Mater. Chem. A 2026, doi:10.1039/D6TA00751A).

Time Period TuA Sessions | Abstract Timeline | Topic AP Sessions | Time Periods | Topics | AVS 72 Schedule