IWGO 2026 Wednesday Afternoon
Sessions | Time Periods | Topics | Schedule Overview
Hover over a paper or session to view details.
Click a Session in the first column to view session papers.
| Session | Wednesday, August 5, 2026 | ||||||||||||||||||||||
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| 2:00 PM | 3:00 PM | ||||||||||||||||||||||
| IWGO-WeA |
Recent Advances in β–Ga₂O₃ Power and RF Device Technologies
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1.5 kV/0.6 A Double Pulse Test Switching Of Cr2O3/β-Ga2O3 Heterojunction Diodes With > 3 kV Breakdown Voltages And Record Low Reverse Recovery Charge
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Sub-Micron β-Ga2O3 FinFETs with >700 mA/mm Current Density and >10⁸ ON/OFF Ratio Using Si δ-Doped Channels
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Over 3 kV Ultra-low Leakage Vertical (011) β-Ga2O3 Diodes with Schottky Contact Engineering and High-κ Field Plate
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Vertical Ga2O3(010) FinFETs Processed with Nitrogen Radical Irradiation
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Enhancement-Mode Ga2O3 CAVETs with Improved Breakdown Voltage by Hot Implantation
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Enhancement-Mode Vertical β-Ga2O3 U-Trench MOSFET with N-doped CBL and MOCVD regrown n+ Contact Layers
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